tl(re,rme,se,oe,ye,ge)27c 2002-09-25 1 . toshiba ingaa ? p led tlre27c, tlrme27c, tlse27c tloe27c, tlye27c, TLGE27C panel circuit indicator elliptical lens: colored transparent lens ingaa ? p technology all plastic mold type high intensity light emission excellent low current light output applications: outdoor message signbords, full color panel, backlight line up maximum ratings (ta = 25c) product name forward current i f (ma) reverse voltage v r (v) power dissipation p d (mw) operating temperature t opr (c) storage temperature t stg (c) tlre27c 50 4 120 40~100 40~120 tlrme27c 50 4 120 40~100 40~120 tlse27c 50 4 120 40~100 40~120 tloe27c 50 4 120 40~100 40~120 tlye27c 50 4 120 40~100 40~120 TLGE27C 50 4 120 40~100 40~120 unit in mm toshiba weight: 0.3g product name color material tlre27c red tlrme27c red tlse27c red tloe27c orange tlye27c yellow TLGE27C green ingaa ? p
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 2 electrical and optical characteristics (ta = 25c) typ. emission wavelength luminous intensity i v forward voltage v f reverse current i r product name d p ? i f min typ. i f typ. max i f max v r tlre27c 630 644 20 20 85 300 20 1.9 2.4 20 50 4 tlrme27c 626 636 23 20 153 400 20 1.9 2.4 20 50 4 tlse27c 613 623 20 20 272 750 20 1.9 2.4 20 50 4 tloe27c 605 612 20 20 272 800 20 2.0 2.4 20 50 4 tlye27c 587 590 17 20 272 650 20 2.0 2.4 20 50 4 TLGE27C 571 574 17 20 85 250 20 2.0 2.4 20 50 4 unit nm ma mcd ma v ma a v precautions please be careful of the following: soldering temperature: 260c max, soldering time: 3 s max (soldering portion of lead: below the lead stopper) if the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. soldering should be performed after lead forming. this visible led lamp also emits some ir light. if a photodetector is located near the led lamp, please ensure that it will not be affected by this ir light.
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 3 tlre27c relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 i f = 20ma ta = 2 5 c i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 3000 10 1 1000 100 10 100 ta = 2 5 c i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 h radiation pattern ta = 2 5 c 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 h
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 4 tlrme27c relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 580 0.8 0.6 0.4 0.2 600 620 640 660 680 700 i f = 20ma ta = 2 5 c i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 10000 10 1 1000 100 10 100 i v ? i f forward current i f (ma) luminous intensity i v (mcd) ta = 2 5 c h radiation pattern ta = 2 5 c 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 h
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 5 tlse27c relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 560 0.8 0.6 0.4 0.2 580 600 620 640 660 680 i f = 20ma ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 2 5 c h radiation pattern ta = 2 5 c 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c h
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 6 tloe27c relative luminous intensity wavelength wavelength (nm) relative luminous intensity 1.0 0 540 0.8 0.6 0.4 0.2 560 580 600 620 640 660 i f = 20ma ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 h radiation pattern ta = 2 5 c h 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 2 5 c
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 7 tlye27c 1.0 0 540 0.8 0.6 0.4 0.2 560 580 600 620 640 660 relative luminous intensity wavelength wavelength (nm) relative luminous intensity i f = 20ma ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 3 0.1 1 0.5 0.3 h radiation pattern ta = 2 5 c h 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c i v ? i f forward current i f (ma) luminous intensity i v (mcd) 10000 10 1 1000 100 10 100 ta = 2 5 c
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 8 TLGE27C 1.0 0 520 0.8 0.6 0.4 0.2 540 560 580 600 620 640 relative luminous intensity wavelength wavelength (nm) relative luminous intensity i f = 20ma ta = 2 5 c i v ? tc case temperature tc (c) relative luminous intensity i v 80 60 40 20 0 ? 20 10 0.1 1 0.5 0.3 3 5 i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 80 0 0 60 40 20 20 40 60 80 100 120 i f ? v f forward voltage v f (v) forward current i f (ma) 1 100 1.6 50 30 10 5 3 1.7 1.8 1.9 2.0 2.1 2.2 2.3 ta = 2 5 c h radiation pattern ta = 2 5 c h 90 0 90 80 70 60 50 40 30 20 10 0 80 70 60 50 40 30 20 10 0.2 0.4 0.6 0.8 1.0 i v ? i f forward current i f (ma) luminous intensity i v (mcd) 3000 10 1 1000 100 10 100 ta = 2 5 c
tl(re,rme,se,oe,ye,ge)27c 2002-09-25 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eac restrictions on product use
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